vishay sfh615a / sfh6156 document number 83671 rev. 1.8, 11-jan-05 vishay semiconductors www.vishay.com 1 1 2 4 3 e c a c 17448 1 1 pb p b -free e3 optocoupler, high reliability, 5300 v rms features ? excellent ctr linearity depending on forward current isolation test voltage, 5300 v rms fast switching times low ctr degradation low coupling capacitance lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 applications switchmode power supply telecom battery powered equipment description the sfh615a (dip) and sfh6156 (smd) feature a variety of transfer ratios , low coupling capacitance and high isolation voltage. these couplers have a gaas infrared diode emitter, which is optically cou- pled to a silicon planar ph ototransistor detector, and is incorporated in a plastic dip-4 or smd package. the coupling devices are designed for signal trans- mission between two electrically separated circuits. the couplers are end-stackable with 2.54 mm lead spacing. creepage and clearance distances of > 8.0 mm are achieved with option 6. this version complies with iec 60950 (din vde 0805) for reinforced insulation up to an operation voltage of 400 v rms or dc. specifications subject to change. order information for additional information on t he available options refer to option information. see tape and reel section for 4-pin optocouplers t0 with 90 rotation. part remarks sfh615a-1 ctr 40 - 80 %, dip-4 sfh615a-2 ctr 63 - 125 %, dip-4 sfh615a-3 ctr 100 - 200 %, dip-4 sfh615a-4 ctr 160 - 320 %, dip-4 sfh6156-1 ctr 40 - 80 %, smd-4 sfh6156-2 ctr 63 - 125 %, smd-4 sfh6156-3 ctr 100 - 200 %, smd-4 sfh6156-4 ctr 160 - 320 %, smd-4 SFH615A-1X006 ctr 40 - 80 %, dip-4 400 mil (option 6) sfh615a-1x007 ctr 40 - 80 %, smd-4 (option 7) sfh615a-2x006 ctr 63 - 125 %, dip-4 400 mil (option 6) sfh615a-2x007 ctr 63 - 125 %, smd-4 (option 7) sfh615a-2x009 ctr 63 - 125 %, smd-4 (option 9) sfh615a-3x006 ctr 100 - 200 %, dip-4 400 mil (option 6) sfh615a-3x007 ctr 100 - 200 %, smd-4 (option 7) sfh615a-3x008 ctr 100 - 200 %, smd-4 (option 8) sfh615a-3x009 ctr 100 - 200 %, smd-4 (option 9) sfh615a-4x006 ctr 160 - 320 %, dip-4 400 mil (option 6) sfh615a-4x007 ctr 160 - 320 %, smd-4 (option 7) sfh615a-4x008 ctr 160 - 320 %, smd-4 (option 8) sfh615a-4x009 ctr 160 - 320 %, smd-4 (option 9)
www.vishay.com 2 document number 83671 rev. 1.8, 11-jan-05 vishay sfh615a / sfh6156 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t p 10 si fsm 2.5 a power dissipation p diss 100 mw parameter test condition symbol value unit collector-emitter voltage v ce 70 v emitter-collector voltage v ceo 7.0 v collector current i c 50 ma t p 1.0 ms i c 100 ma power dissipation p diss 150 mw parameter test condition symbol value unit isolation test voltage (between emitter and detector, refered to climate din 40046, part 2, nov. 74 t = 1.0 s v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm insulation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c soldering temperature max. 10 s, dip soldering distance to seating plane 1.5 mm t sld 260 c
vishay sfh615a / sfh6156 document number 83671 rev. 1.8, 11-jan-05 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler 0 50 100 150 200 0 25 50 75 100 125 150 18483 p Cpower dissipation (mw) tot phototransistor diode t amb C ambient temperature ( q c ) figure 1. permissible power dissi pation vs. ambient temperature parameter test condition symbol min ty p. max unit forward voltage i f = 60ma v f 1.25 1.65 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 13 pf thermal resistance r thja 750 k/w parameter test condition part symbol min ty p. max unit collector-emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 5.2 pf thermal resistance r thja 500 k/w collector-emitter leakage current v ce = 10 v sfh615a-1 sfh6156-1 i ceo 2.0 50 na sfh615a-2 sfh6156-2 i ceo 2.0 50 na sfh615a-3 sfh6156-3 i ceo 5.0 100 na sfh615a-4 sfh6156-4 i ceo 5.0 100 na parameter test condition symbol min ty p. max unit collector-emitter saturation voltage i f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v coupling capacitance c c 0.4 pf
www.vishay.com 4 document number 83671 rev. 1.8, 11-jan-05 vishay sfh615a / sfh6156 vishay semiconductors current transfer ratio switching characteristics switching non-saturated switching saturated parameter te s t c o n d i t i o n part symbol min ty p. max unit i c /i f i f = 10 ma, v ce = 5.0 v sfh615a-1 sfh6156-1 ctr 40 80 % sfh615a-2 sfh6156-2 ctr 63 125 % sfh615a-3 sfh6156-3 ctr 100 200 % sfh615a-4 sfh6156-4 ctr 160 320 % i f = 1.0 ma, v ce = 5.0 v sfh615a-1 sfh6156-1 ctr 13 30 % sfh615a-2 sfh6156-2 ctr 22 45 % sfh615a-3 sfh6156-3 ctr 34 70 % sfh615a-4 sfh6156-4 ctr 56 90 % parameter test condition symbol min ty p. max unit rise time i f = 10 ma, v cc = 5.0 v, t a = 25 c, r l = 75 ? t r 2.0 s fall time i f = 10 ma, v cc = 5.0 v, t a = 25 c, r l = 75 ? t f 2.0 s turn-on time i f = 10 ma, v cc = 5.0 v, t a = 25 c, r l = 75 ? t on 3.0 s turn-off time i f = 10 ma, v cc = 5.0 v, t a = 25 c, r l = 75 ? t off 2.3 s cut-off frequency i f = 10 ma, v cc = 5.0 v, t a = 25 c, r l = 75 ? f ctr 250 khz parameter test condition part symbol min ty p. max unit rise time v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 20 ma sfh615a-1 sfh6156-1 t r 2.0 s v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 10 ma sfh615a-2 sfh6156-2 t r 3.0 s sfh615a-3 sfh6156-3 t r 3.0 s v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 5.0 ma sfh615a-4 sfh6156-4 t r 4.6 s fall time v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 20 ma sfh615a-1 sfh6156-1 t f 11 s v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 10 ma sfh615a-2 sfh6156-2 t f 14 s sfh615a-3 sfh6156-3 t f 14 s v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 5.0 ma sfh615a-4 sfh6156-4 t f 15 s turn-on time v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 20 ma sfh615a-1 sfh6156-1 t on 3.0 s v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 10 ma sfh615a-2 sfh6156-2 t on 4.2 s sfh615a-3 sfh6156-3 t on 4.2 s v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 5.0 ma sfh615a-4 sfh6156-4 t on 6.0 s
vishay sfh615a / sfh6156 document number 83671 rev. 1.8, 11-jan-05 vishay semiconductors www.vishay.com 5 typical characteris tics (tamb = 25 c unless otherwise specified) turn-off time v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 20 ma sfh615a-1 sfh6156-1 t off 18 s v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 10 ma sfh615a-2 sfh6156-2 t off 23 s sfh615a-3 sfh6156-3 t off 23 s v cc = 5.0 v, t a = 25 c, r l = 1 k ? , i f = 5.0 ma sfh615a-4 sfh6156-4 t off 25 s parameter test condition part symbol min ty p. max unit figure 2. linear operation (without saturation) figure 3. switching operation (with saturation) isfh615a_01 r l =75 ? v cc =5v i c 47 ? i f isfh615a_02 1 ? v cc =5v 47 ? i f fi 4casfraiiasa fi 5chaaisisccs civa isfh615a_01 C25 0 25 50 c 75 10 3 10 2 10 1 5 5 % i c i f t a 4 3 2 1 i f =10ma,v ce = 5.0 v isfh615a_04 30 20 10 0 0 5 10 v 15 i f =14 ma 2.0 ma 4.0 ma 6.0 ma 8.0 ma 10 ma 12 ma 1.0 ma ma i c v ce
www.vishay.com 6 document number 83671 rev. 1.8, 11-jan-05 vishay sfh615a / sfh6156 vishay semiconductors figure 6. diode forward voltage (typ.) vs. forward current figure 7. transistor capacitance (typ.) vs. collector-emitter voltage figure 8. permissible pulse handl ing capability forward current vs. pulse width isfh615a_05 v f i f 25 50 75 1.2 1.1 1.0 0.9 10 C1 10 0 10 1 ma 10 2 v isfh615a_06 20 15 10 5 0 pf c v e 10 C2 10 C1 10 C0 10 1 v10 2 c ce f = 1.0 mhz isfh615a_07 i f t p 10 C5 10 C4 10 C3 10 C2 10 C1 10 0 s10 1 10 4 10 3 10 2 10 1 5 5 5 ma d= t p t t p i f t d= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 dc pulse cycl e d = parameter
vishay sfh615a / sfh6156 document number 83671 rev. 1.8, 11-jan-05 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) package dimensions in inches (mm) i178027 .255 (6.48) .268 (6.81) 1 2 4 3 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. .100 (2.54) .130 (3.30) .150 (3.81) .020 (.508 ) .035 (.89) 10 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .050 (1.27) iso method a i178029 .255 (6.48) .268 (6.81) 34 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. 1.00 (2.54) typ. .130 (3.30) .150 (3.81) .0098 (.249) .035 (.102) .020 (.508) .040 (1.02) .031 (.79) typ. .050 (1.27) typ. .010 (.25) typ. 10 3C7 .375 (9.52) .305 (10.03) .296 (7.52) .312 (7.90) .315 (8.00) min. lead coplanarity .004 max. smd iso method a .100 (2.54) r .010 (.25) .070 (1.78) .030 (.76) .315 (8.00) mi n .060 (1.52) .435 (11.05)
www.vishay.com 8 document number 83671 rev. 1.8, 11-jan-05 vishay sfh615a / sfh6156 vishay semiconductors min. .315 ( 8 .00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. 0040 (.102) 009 8 (.249) 15 max. option 9 1 8 4 8 6
vishay sfh615a / sfh6156 document number 83671 rev. 1.8, 11-jan-05 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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